Members Ultra-High Power Semiconductor
Academic background
Assistant professor at Korea institute of Energy Technology (KENTECH) - (2021. 02 Current)
Senior research collaborator at University of Cambridge (2020.06 – Current)
Ph.D. at Electrical Engineering, University of Cambridge, United Kingdom (Feb. 2020)
Thesis: Theory of Superjunction Devices. Supervisor: Professor Florin Udrea )M.S. at School of Electrical and Electronic Engineering, Yonsei University, South Korea (Feb. 2012)
B.S. at School of Electrical and Electronic Engineering, Yonsei University, South Korea (Feb. 2010)
Industrial background
Consultancy member for power devices development, Magnachip semiconductor Inc. (Aug. 2020 ~ Current)
Power MOSFET design (senior) engineer in department of technology Development, Fairchild semiconductor Inc. (Mar. 2012~ Dec. 2015)
Achievement
Kang & Udrea’s figures of merit (KUFOM)
| μn(cm2/Ⅴ·s) | ε | Ec(MⅤ/㎝) | Baliga (1983) |
Fujihira (1998) |
Kang and Udrea (2018) |
|
|---|---|---|---|---|---|---|
| Material | μn·εS·EC2 | μn·εS·EC2 | μn·εS·EC2.5 | |||
| Si | 1350 | 11.8 | 0.3 | 1 | 1 | 1 |
| 4H-SiC | 720 | 10 | 2 | 134 | 20 | 52 |
| h-GaN | 900 | 9 | 3.3 | 677 | 62 | 204 |
| β-Ga2O3 | 300 | 10 | 8 | 3571 | 134 | 692 |
| AIN | 1100 | 8.7 | 11.7 | 35636 | 914 | 5706 |
| Diamond | 1900 | 5.5 | 5.6 | 4267 | 229 | 988 |
Figures of merits (FOM) in power devices is the index how many times the performance of the power semiconductor can be improved when the material is changed from silicon to other wide bandgap materials. For example, according to KUFOM, 4H-SiC power device will show 52 times better performance than silicon. Baliga’s FOM (BFOM) is only applied to standard (planar) type devices (not applicable to superjunction structure) and it is overestimated. Fujihira’s FOM (FFOM) is based on superjunction structure, but does not take into account the parasitic JFET effect owing to its complexity of the calculation, and, therefore, it is underestimated. In 2018, finally, a new FOM was derived by Kang and Udrea (KUFOM). KUFOM includes JFET effect in a superjunction structure and locates between Baliga and Fujihira presenting a quite practical improvement index.